Data/hora: 11/06/2024 05:21:32

Provedor de dados: 	5	
País: 	France	
Título: 	Structural analysis of RF sputtered Ge-Sb-Se thin films by Raman and X-ray photoelectron spectroscopies	
Autores: 	Baudet, E.; Cardinaud, C.; Girard, A.; Rinnert, Emmanuel; Michel, K.; Bureau, B.; Nazabal, V.	
Data: 	2016-07	
Ano: 	2016	
Palavras-chave: 	Chalcogenide glass; Thin films; Radio-frequency magnetron sputtering; Raman spectroscopy; X-ray photoelectron spectroscopy; Structure.	
Resumo: 	Chalcogenide thin films (GeSe2)100 − x(Sb2Se3)x (with x = 10 and 50) were deposited by Radio-frequency (RF) magnetron sputtering. In order to study the impact of Ar pressure on the structure and the composition of selenide thin films structural properties of thin films and targets were investigated by means of Raman scattering spectroscopy and X-ray photoelectron spectroscopy (XPS). Under low pressure (5 · 10− 3 mbar), the increase of wrong bonds like Ge(Sb)-Ge(Sb) was confirmed by Raman and also XPS for both composition. The observed structural changes with Ar pressure are linked with modification of the composition of the selenide films analyzed by EDS and XPS. Furthermore for higher Ar pressure (5 · 10− 2 mbar), RF sputtered thin film and target structure present a great similarity. These differences driven by Ar pressure modification are probably related to distinctive sputtering rate and mean free path of the particles ejected from target for the different Ar pressures.	
Tipo: 	Text	
Idioma: 	Inglês	
Identificador: 	http://archimer.ifremer.fr/doc/00334/44521/46570.pdf

DOI:10.1016/j.jnoncrysol.2016.04.017

http://archimer.ifremer.fr/doc/00334/44521/	
Editor: 	Elsevier Science Bv	
Formato: 	application/pdf	
Fonte: 	Journal Of Non-crystalline Solids (0022-3093) (Elsevier Science Bv), 2016-07 , Vol. 444 , P. 64-72	
Fonte: 	2016 Elsevier B.V. All rights reserved.

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