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| Bhuiyan,Mohammad A.S.; Zijie,Yeoh; Yu,Jae S.; Reaz,Mamun B.I.; Kamal,Noorfazila; Chang,Tae G.. |
| Modern Radio Frequency (RF) transceivers cannot be imagined without high-performance (Transmit/Receive) T/R switch. Available T/R switches suffer mainly due to the lack of good trade-off among the performance parameters, where high isolation and low insertion loss are very essential. In this study, a T/R switch with high isolation and low insertion loss performance has been designed by using Silterra 0.13µm CMOS process for 2.4GHz ISM band RF transceivers. Transistor aspect ratio optimization, proper gate bias resistance, resistive body floating and active inductor-based parallel resonance techniques have been implemented to achieve better trade-off. The proposed T/R switch exhibits 0.85dB insertion loss and 45.17dB isolation in both transmit and receive... |
| Tipo: Info:eu-repo/semantics/article |
Palavras-chave: Active inductor; CMOS; ISM band; T/r switch; Transceiver. |
| Ano: 2016 |
URL: http://www.scielo.br/scielo.php?script=sci_arttext&pid=S0001-37652016000301089 |
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