Abstract: The objective of this work was to evaluate the effect of silicon fertilization on gas exchange, leaf anatomy, and ultrastructural characteristics of passion fruit (Passiflora edulis). The treatments comprised four concentrations of silicon (0, 0.28, 0.55, and 0.83 g per pot) at 1% silicic acid solution (SiO2.XH2O). This solution was applied around the stems of the plants. The first application was made 15 days after seedlings were transplanted. In total, three applications were made at 15-day intervals. The pots that constituted the control treatment received water in the same amount. After the final application, the plants were subjected to analyses of gas exchange, anatomical changes, and ultrastructural characteristics. The use of silicon... |